METHOD FOR FORMING CHARGE TRANSPORT LAYER, ORGANIC SEMICONDUCTOR STRUCTURE AND ITS FABRICATION PROCESS

METHOD FOR FORMING CHARGE TRANSPORT LAYER, ORGANIC SEMICONDUCTOR STRUCTURE AND ITS FABRICATION PROCESS

PROBLEM TO BE SOLVED: To provide a novel method for forming a bipolar charge transport layer, and to provide an organic semiconductor structure having a charge transport layer and its fabrication process. SOLUTION: A bipolar charge transport layer is formed by injecting a fluid hole transport materi...

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Hauptverfasser: MAEDA HIROMI, OISHI RYOTA, HANNA JUNICHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MAEDA HIROMI
OISHI RYOTA
HANNA JUNICHI
description PROBLEM TO BE SOLVED: To provide a novel method for forming a bipolar charge transport layer, and to provide an organic semiconductor structure having a charge transport layer and its fabrication process. SOLUTION: A bipolar charge transport layer is formed by injecting a fluid hole transport material into a previously formed air gap by utilizing an oxygen interrupting means. In this method, the oxygen interrupting means preferably utilizes capillarity. A charge transport layer thus formed exhibits a bipolar charge transport power. COPYRIGHT: (C)2006,JPO&NCIPI
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR FORMING CHARGE TRANSPORT LAYER, ORGANIC SEMICONDUCTOR STRUCTURE AND ITS FABRICATION PROCESS
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