METHOD FOR FORMING CHARGE TRANSPORT LAYER, ORGANIC SEMICONDUCTOR STRUCTURE AND ITS FABRICATION PROCESS

METHOD FOR FORMING CHARGE TRANSPORT LAYER, ORGANIC SEMICONDUCTOR STRUCTURE AND ITS FABRICATION PROCESS

PROBLEM TO BE SOLVED: To provide a novel method for forming a bipolar charge transport layer, and to provide an organic semiconductor structure having a charge transport layer and its fabrication process. SOLUTION: A bipolar charge transport layer is formed by injecting a fluid hole transport materi...

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Bibliographische Detailangaben
Hauptverfasser: MAEDA HIROMI, OISHI RYOTA, HANNA JUNICHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a novel method for forming a bipolar charge transport layer, and to provide an organic semiconductor structure having a charge transport layer and its fabrication process. SOLUTION: A bipolar charge transport layer is formed by injecting a fluid hole transport material into a previously formed air gap by utilizing an oxygen interrupting means. In this method, the oxygen interrupting means preferably utilizes capillarity. A charge transport layer thus formed exhibits a bipolar charge transport power. COPYRIGHT: (C)2006,JPO&NCIPI