FIELD EFFECT TRANSISTOR

PROBLEM TO BE SOLVED: To provide a field effect transistor wherein a source-to-drain resistance is low and such a problem that a semiconductor is difficult to be embedded is hard to occur. SOLUTION: The field effect transistor is provided with a super junction 4 formed of a parallel pn layer 3 wherein a drift area 3a made of a first conductive semiconductor and a partition area 3b made of a second conductive semiconductor are alternately arranged, source electrodes S formed respectively on one main surface 2a and the other main surface 2b of a substrate 1 with the super junction 4 in between, and a drain electrode D. The semiconductor comprising the field effect transistor 1 is a nitride-based compound semiconductor. COPYRIGHT: (C)2006,JPO&NCIPI