PRECURSOR COMPOUND FOR DEPOSITING COATING FILM OF CERAMIC AND METAL, AND METHOD FOR PREPARING THE SAME

PROBLEM TO BE SOLVED: To provide a precursor compound for depositing the coating film of a ceramic and a metal, and to provide a method for preparing the same. SOLUTION: The precursor compound for depositing the coating film of the ceramic and the metal is used for the coating film of the ceramic or...

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1. Verfasser: SHIN HYUN KOOCK
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description PROBLEM TO BE SOLVED: To provide a precursor compound for depositing the coating film of a ceramic and a metal, and to provide a method for preparing the same. SOLUTION: The precursor compound for depositing the coating film of the ceramic and the metal is used for the coating film of the ceramic or the metal on a silicon substrate, for example, for depositing a metal nitride, a metal oxide, a metal silicate, a mixed metal nitride, an oxide and a silicate, and a pure metal. A metal for preparing the same, and a method for forming a coating film on the substrate with the compound. COPYRIGHT: (C)2006,JPO&NCIPI
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subjects ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title PRECURSOR COMPOUND FOR DEPOSITING COATING FILM OF CERAMIC AND METAL, AND METHOD FOR PREPARING THE SAME
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