METHOD OF ACQUIRING DATA ON LIFE OF INSULATION FILM FORMED OF MATERIAL HAVING HIGH DIELECTRIC CONSTANT

PROBLEM TO BE SOLVED: To provide a method of acquiring data on the life of an insulation film formed of a high-k material, and eventually to provide a method of testing the life of a field effect transistor which uses the high-k material for a gate insulation film. SOLUTION: The method of acquiring data is provided on the life of an insulation film which indicates the life of the insulation film in a high-k film 104 by using a semiconductor apparatus comprising an n-type substrate 102, a base film 103, the high-k film 104, and a gate electrode 105. The method comprises a positive bias application process of applying a positive bias to the gate electrode 105; and a data acquisition process wherein a change over time is measured in leakage current flowing to the n-type substrate 102 via the high-k film 104 and the base film 103, and thereafter, the positive bias application time until an inflection point appears in the change in the leakage current over time is acquired as the data on the life of the insulation film in the high-k film 104. COPYRIGHT: (C)2006,JPO&NCIPI