SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a high reliability semiconductor device by preventing the propagation of cracks and fine exfoliation, occurring at the time of cutting a semiconductor wafer to an active element region, and to provide a method of manufacturing the semiconductor wafer and the semicond...

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Bibliographische Detailangaben
Hauptverfasser: YAMAZAKI AKIRA, ABE SHUNICHI, IZUMI TADAO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a high reliability semiconductor device by preventing the propagation of cracks and fine exfoliation, occurring at the time of cutting a semiconductor wafer to an active element region, and to provide a method of manufacturing the semiconductor wafer and the semiconductor device. SOLUTION: The semiconductor device comprises a silicon substrate 1 which has a principal plane 1a and has an active element region 101 where a semiconductor element is formed and a cut region 102 extended around the active element region 101, both of which are defined on the principal plane 1a; and an interlayer insulating film 2 formed on the principal plane 1a. In the interlayer insulating film 2, a trench 8 is formed at a part corresponding to the cut region 102. The semiconductor device is also provided with a sacrificial layer 3, containing a non-metal material with which the trench 8 is filled. COPYRIGHT: (C)2005,JPO&NCIPI