SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To prevent particles from being generated from the rear face of a silicon substrate caused by the lift-off of a silicon nitride film, in the silicon substrate in which a silicon oxide film and the silicon nitride film are formed on the rear face of the silicon substrate from the lower layer of the substrate in this order. SOLUTION: In the silicon substrate with the first silicon oxide film 2 and the silicon nitride film 3 formed in this order from the lower layer at the rear face of the silicon substrate 1, a tantalum oxide film 4 is formed on the silicon nitride film 3. Even when a transfer defect is generated in the silicon nitride film 3 for a transfer chuck, chemicals do not reach the first silicon oxide film 2 below the transfer defect, and particle generation at the rear face of the silicon substrate 1 caused by the lift-off of the silicon nitride film is prevented because the top layer of the rear of the silicon substrate has been coated with the tantalum oxide film 4 with low solubility against chemicals, even if the silicon substrate is washed with chemicals such as HF water solutions, etc. that can dissolve the silicon oxide film. COPYRIGHT: (C)2005,JPO&NCIPI