NOTCH WHEEL

PROBLEM TO BE SOLVED: To provide a notch wheel, preventing heavy metal contamination to a wafer and keeping good working accuracy. SOLUTION: The notch wheel 1 is composed of an abrasive grain layer 2 having a groove 4 for machining a notch part of the wafer; and a metallic support 3 to which the abr...

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Bibliographische Detailangaben
1. Verfasser:	MIYAZAKI KENICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a notch wheel, preventing heavy metal contamination to a wafer and keeping good working accuracy. SOLUTION: The notch wheel 1 is composed of an abrasive grain layer 2 having a groove 4 for machining a notch part of the wafer; and a metallic support 3 to which the abrasive grain layer 2 is fixed to form a fitting part to a machine tool. The abrasive grain layer 2 of the notch wheel 1 is formed by binding diamond abrasive grain with grading of #1500 to #4000 (mean particle diameter of 2 to 12 μm) with resin. The abrasive grain layer 2 may contain SiC. The bending strength of the abrasive grain layer 2 is set to 60 to 150 MPa, the longitudinal elastic modulus is set to 10 to 40 GPa, the hardness is set to HRf 70 or higher, and the degree of concentration is set ranging from 75 to 150. The SiC as filler is added in a suitable quantity depending on the physical property of the abrasive grain layer. COPYRIGHT: (C)2005,JPO&NCIPI