RF INDUCTION PLASMA SOURCE APPARATUS FOR PLASMA TREATMENT

PROBLEM TO BE SOLVED: To provide a plasma source apparatus capable of being integrated into semiconductor treatment equipment so as to generate uniform and high density plasma in a wide range of an operating condition. SOLUTION: The plasma source apparatus has a treatment chamber and a coil for gene...

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Bibliographische Detailangaben
1. Verfasser:	PARANJPE AJIT P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma source apparatus capable of being integrated into semiconductor treatment equipment so as to generate uniform and high density plasma in a wide range of an operating condition. SOLUTION: The plasma source apparatus has a treatment chamber and a coil for generating a whistler wave in the treatment chamber. The coil is composed of a plurality of parallel lines with at least three different lengths. COPYRIGHT: (C)2005,JPO&NCIPI