POLISHING COMPOSITION

PROBLEM TO BE SOLVED: To provide a polishing composition for easily achieving a high polishing speed for titanium, and to provide a polishing composition for easily achieving a high polishing speed for titanium while increasing the polishing speed for a conductive metal. SOLUTION: This polishing com...

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Bibliographische Detailangaben
Hauptverfasser:	HORIKAWA TOMOYO, ONO KOJI, TAMAI KAZUMASA
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing composition for easily achieving a high polishing speed for titanium, and to provide a polishing composition for easily achieving a high polishing speed for titanium while increasing the polishing speed for a conductive metal. SOLUTION: This polishing composition contains colloidal silica and water. Further, the concentration of the colloidal silica is 0.1 mass%, preferably 0.25-0.75 mass%, and more preferably 0.35-0.65 mass%. Further, the pH of the polishing composition is 6 or less, preferably 1.8-4.0, and more preferably 2.0-3.0. Further, preferably the polishing composition contains fumed oxide particles and an oxidizer. COPYRIGHT: (C)2005,JPO&NCIPI