SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To prevent deterioration of capacitance characteristics of the capacitor of an MIM structure, even if plasma treatment is carried out after metal compound film formation by a CVD (MOCVD) method which uses an organic metal material. SOLUTION: A semiconductor device has the capac...

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Bibliographische Detailangaben
Hauptverfasser:	FUKUMAKI NAOMI, YAMAMOTO ASAE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent deterioration of capacitance characteristics of the capacitor of an MIM structure, even if plasma treatment is carried out after metal compound film formation by a CVD (MOCVD) method which uses an organic metal material. SOLUTION: A semiconductor device has the capacitor 19 of an MIM structure which is formed by forming a lower electrode 16 and an upper electrode 18, consisting of a TiN film in a capacitance insulating film 17 formed of a ZrO2film. In the device, the upper electrode 18 is formed of a TiN film having a composition ratio of C of 25 to 36%, N of 60 to 72% and O of 28 to 35% to Ti of 100% (atomic number ratio). COPYRIGHT: (C)2005,JPO&NCIPI