LOW DOPED LAYER FOR NITRIDE-BASED SEMICONDUCTOR DEVICE

LOW DOPED LAYER FOR NITRIDE-BASED SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide nitride-based semiconductor devices, such as Schottky diodes, having a layer formed to allow re-creating very low and uniform doping. SOLUTION: A re-creatable and uniform low-doped layer is formed of a plurality of sub-layers 208 of doped nitride semiconductor materi...

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Bibliographische Detailangaben
Hauptverfasser: MURPHY MICHAEL, SHELTON BRYAN S, POPHRISTIC MILAN, STALL RICHARD A, LIU LINLIN, CERUZZI ALEX D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide nitride-based semiconductor devices, such as Schottky diodes, having a layer formed to allow re-creating very low and uniform doping. SOLUTION: A re-creatable and uniform low-doped layer is formed of a plurality of sub-layers 208 of doped nitride semiconductor material and a plurality of sub-layers 209 of undoped nitride semiconductor material alternately arranged atop another layer. A Schottky diode is formed of such a low-doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer 106. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased. COPYRIGHT: (C)2005,JPO&NCIPI