IN-SITU ABSOLUTE MEASURING METHOD AND EQUIPMENT FOR THICKNESS OF THIN FILM, REMOVAL RATE OF THIN FILM AND REMOVAL END POINT

PROBLEM TO BE SOLVED: To provide constructive thickness measuring device and method by an in-situ process for determining the thickness of a thin film, an ashing speed and an end point. SOLUTION: There is included a room having a primary visual field port 126 and a secondary visual field port 127. T...

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Bibliographische Detailangaben
Hauptverfasser:	JANOS ALAN, MONTIEN SAUBHAYANA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide constructive thickness measuring device and method by an in-situ process for determining the thickness of a thin film, an ashing speed and an end point. SOLUTION: There is included a room having a primary visual field port 126 and a secondary visual field port 127. The primary visual field port 126 includes light receiving means 116 in the shape of receiving a light at a shallow angle from the front surface of a substrate to be treated. The secondary visual field port 127 includes a broad band lighting luminous source, and is preferably arranged at a side wall facing to the light receiving means 116. This treatment comprises a step of calculating the thickness of the thin film, the ashing speed and the end point from an interference pattern. COPYRIGHT: (C)2005,JPO&NCIPI