CAPACITOR OF SEMICONDUCTOR DEVICE, MEMORY ELEMENT INCLUDING SAME, AND METHOD OF FABRICATING SAME
PROBLEM TO BE SOLVED: To provide a capacitor of a semiconductor device that allows low-temperature processing, has a wide process window, and has improved physical characteristics of a product. SOLUTION: The capacitor of a semiconductor device is characterized by a lower electrode 43 of a single lay...
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| creator | KIM SUK-PIL CHO CHOONG-RAE SHIN SANG-MIN GU SHUNMO |
| description | PROBLEM TO BE SOLVED: To provide a capacitor of a semiconductor device that allows low-temperature processing, has a wide process window, and has improved physical characteristics of a product. SOLUTION: The capacitor of a semiconductor device is characterized by a lower electrode 43 of a single layer formed of noble metal alloy or oxide thereof, a dielectric film 44 arranged on the lower electrode 43, and an upper electrode 46 arranged on the dielectric film 44. COPYRIGHT: (C)2005,JPO&NCIPI |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | CAPACITOR OF SEMICONDUCTOR DEVICE, MEMORY ELEMENT INCLUDING SAME, AND METHOD OF FABRICATING SAME |
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