CAPACITOR OF SEMICONDUCTOR DEVICE, MEMORY ELEMENT INCLUDING SAME, AND METHOD OF FABRICATING SAME

CAPACITOR OF SEMICONDUCTOR DEVICE, MEMORY ELEMENT INCLUDING SAME, AND METHOD OF FABRICATING SAME

PROBLEM TO BE SOLVED: To provide a capacitor of a semiconductor device that allows low-temperature processing, has a wide process window, and has improved physical characteristics of a product. SOLUTION: The capacitor of a semiconductor device is characterized by a lower electrode 43 of a single lay...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KIM SUK-PIL, CHO CHOONG-RAE, SHIN SANG-MIN, GU SHUNMO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a capacitor of a semiconductor device that allows low-temperature processing, has a wide process window, and has improved physical characteristics of a product. SOLUTION: The capacitor of a semiconductor device is characterized by a lower electrode 43 of a single layer formed of noble metal alloy or oxide thereof, a dielectric film 44 arranged on the lower electrode 43, and an upper electrode 46 arranged on the dielectric film 44. COPYRIGHT: (C)2005,JPO&NCIPI