COMPOSITION AND METHOD FOR LOW DOWNFORCE PRESSURE POLISHING OF COPPER

PROBLEM TO BE SOLVED: To provide a composition and a method for polishing a copper interconnect effectively at a low down force pressure. SOLUTION: An aqueous composition useful for polishing copper on a semiconductor wafer at a down force pressure of at least less than 20.68 kPa, comprising: a 1 to...

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Bibliographische Detailangaben
Hauptverfasser:	KELLEY FRANCIS J, SO JOSEPH K, GOLDBERG WENDY B, QUANCI JOHN, THOMAS TERENCE M, WANG HONGYU
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NATURAL RESINS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a composition and a method for polishing a copper interconnect effectively at a low down force pressure. SOLUTION: An aqueous composition useful for polishing copper on a semiconductor wafer at a down force pressure of at least less than 20.68 kPa, comprising: a 1 to 15 wt% oxidizer; a 0.1 to 1 wt% inhibitor of nonferrous metal; a 0.05 to 3 wt% complexing agent of nonferrous metal; a 0.01 to 5 wt% carboxylic acid polymer; 0.01 to 5 wt% modified cellulose; and a 0.05 to 10 wt% phosphorus-containing compound, and a 0 to 10 wt% abrasive, wherein the phosphorus-containing compound increases removal of the copper. COPYRIGHT: (C)2005,JPO&NCIPI