APPARATUS FOR GROWING OXIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To solve the problem that the quality of a growing crystal in a growth vessel is degraded by thermal stress because the temperature gradient during descending of the growth vessel and at the time of completion of the descending becomes large relatively when the temperature gradient is made large at the solid-liquid interface position in a conventional apparatus, in the growth of the oxide single crystal by a vertical Bridgman method. SOLUTION: In the growth apparatus, a cylindrical heat insulating part is arranged at a part lower than the lowest part of the growth vessel at the position at the time of completion of descending of the growth vessel in a furnace core tube. Thereby, the temperature gradient is made small during descending of the growth vessel and at the time of completion of the descending without changing the temperature gradient at the solid-liquid interface position, and the high quality crystal can be grown. COPYRIGHT: (C)2005,JPO&NCIPI