SEMICONDUCTOR MEMBER, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor member having a high-quality single-crystal strained silicon layer on strain induction porous silicon, and to provide a method for manufacturing a strained SOI substrate using the semiconductor member and a transfer method (bonding and separation). SO...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SAKAGUCHI KIYOBUMI, NISHIDA AKIYUKI, SATO NOBUHIKO, NOZU KAZUYA, IKEDA HAJIME
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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