SEMICONDUCTOR MEMBER, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor member having a high-quality single-crystal strained silicon layer on strain induction porous silicon, and to provide a method for manufacturing a strained SOI substrate using the semiconductor member and a transfer method (bonding and separation). SOLUTION: An SiGe layer 12 is epitaxially grown on a silicon substrate 11. Only the SiGe layer 12 or the silicon substrate 11 and the SiGe layer 12 is/are porosified by anodizing the SiGe layer 12 to form a strain induction porous layer 12' or a porous silicon layer and the strain induction porous layer 12'. An SiGe layer 14 and a strained silicon layer 15 are formed on the resultant structure. The SiGe layer in the epitaxial growth process only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with low defect density and a high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve low defect density without lattice mismatch, a high-quality semiconductor substrate having the highly strained silicon layer 15 can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI