SEMICONDUCTOR INTEGRATED CIRCUIT FOR ADOPTING LAMINATED NODE-CONTACT STRUCTURE AND LAMINATED THIN-FILM TRANSISTOR, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To supply a semiconductor integrated circuit for adopting a thin-film transistor, and to supply a method for manufacturing the semiconductor integrated circuit. SOLUTION: The semiconductor integrated circuit comprises a bulk transistor formed on a semiconductor substrate, and a first interlayer insulating film for covering the bulk transistor. A lower thin-film transistor is arranged on the first interlayer insulating film, and is covered with a second interlayer insulating film. An upper thin-film transistor is arranged on the second interlayer insulating film, and is covered with a third interlayer insulating film. The first impurity regions of the bulk transistor, the first impurity regions of the lower thin-film transistor, and the first impurity regions of the upper thin-film transistor, are electrically connected one another via a node plug through the first to third interlayer insulating films. COPYRIGHT: (C)2005,JPO&NCIPI