SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which can be manufactured by a simplified process. SOLUTION: The semiconductor device comprises a semiconductor chip 1, metal layers 2b and 2c formed on the first principal plane of the semiconductor chip 1, first conductive layer 3a consisting of a plurality of conductive films stacked on the second principal plane of the semiconductor chip 1, second conductive layer 3b consisting of a plurality of conductive films stacked on the metal layer 2b in the same layer structure as the first conductive layer 3a, that is, stacked in the same order as the first conductive layer 3a when viewed from the semiconductor chip 1 side, and third conductive layer 3c consisting of a plurality of conductive films stacked on the metal layer 2c in the same layer structure as the first conductive layer 3a, that is, stacked in the same order as the first conductive layer 3a when viewed from the semiconductor chip 1 side. The plurality of conductive films include a nickel film 3a2 and a low contact resistance conductive film 3a1 having a lower contact resistance with respect to the semiconductor chip than the nickel film 3a2. The low contact resistance conductive film 3a1 and the nickel film 3a2 are formed in this order from the semiconductor chip 1 side. COPYRIGHT: (C)2005,JPO&NCIPI