SPHERICAL ABERRATION MEASURING PATTERN AND MEASURING METHOD

PROBLEM TO BE SOLVED: To provide a spherical aberration measuring pattern and a measuring method which measures line ends of a plurality of pattern sizes and pitches at once. SOLUTION: The spherical aberration measuring pattern has a repetitive pattern 100 composed of a plurality of line patterns fo...

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Bibliographische Detailangaben
1. Verfasser:	SHIMIZU TADAYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a spherical aberration measuring pattern and a measuring method which measures line ends of a plurality of pattern sizes and pitches at once. SOLUTION: The spherical aberration measuring pattern has a repetitive pattern 100 composed of a plurality of line patterns formed in parallel at fixed pitches and another repetitive pattern 101 composed of a plurality of line patterns formed in parallel at different pitches, and each line pattern has a shape tapered toward the end. They are laid so that those line patterns located near the centers of the repetitive patterns 100, 101 line up on a straight line. The measuring method changes the focal position to form a plurality of measuring patterns different in pattern retrogression length, and measures the pattern retrogression length to find an optimum focal position. COPYRIGHT: (C)2005,JPO&NCIPI