MANUFACTURING METHOD OF POROUS SEMICONDUCTOR

PROBLEM TO BE SOLVED: To improve productivity by providing both a production method in small quantity and large variety and a mass production method, which can produce a porous semiconductor with unidirectional porosities comparatively safely and easily under a gas atmosphere higher than atmospheric pressure, by use of a general casting apparatus with a mold, a continuous casting apparatus and a special floating zone melting apparatus. SOLUTION: The porous semiconductor is manufactured through the following steps: semiconductor materials are heated and melted using a high frequency coil and a halogen lump or a xenon lump under atmospheric pressure or a pressured gas atmosphere in an airtight vessel; then a gas is dissolved in it; and later it is solidified. The gases to be used are mainly hydrogen, nitrogen and an inert gas. The semiconductor materials are silicon, germanium and compound semiconductor. COPYRIGHT: (C)2005,JPO&NCIPI