SOLID STATE IMAGING APPARATUS

PROBLEM TO BE SOLVED: To reduce power consumption of a MOS type sensor which incorporates a floating diffusion (FD) type amplifier in a pixel. SOLUTION: A solid state imaging apparatus connects a drain region in a unit pixel (the region which supplies a pulse voltage to a FD section through a reset...

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Hauptverfasser:	KOBUCHI HIROTO, YAMAGUCHI TAKUMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce power consumption of a MOS type sensor which incorporates a floating diffusion (FD) type amplifier in a pixel. SOLUTION: A solid state imaging apparatus connects a drain region in a unit pixel (the region which supplies a pulse voltage to a FD section through a reset transistor 3) to a drain wire 7, each line of which is distinctive, and supplies a power supply pulse alternatively for every line. The power supply pulse is set up as a HIGH level potential at least in a period of resetting a signal potential and a period of detecting a signal potential in the FD section. COPYRIGHT: (C)2005,JPO&NCIPI