METHOD FOR DEVELOPMENT PROCESSING OF SUBSTRATE, METHOD FOR PROCESSING SUBSTRATE AND DEVELOPING LIQUID SUPPLY NOZZLE

PROBLEM TO BE SOLVED: To remove an antireflection film, formed under a resist film in photolithographic processes of a wafer, without influencing the resist film. SOLUTION: In the photolithographic processes of a wafer W, an antireflection film B having solubility to a developer is formed and then a...

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Bibliographische Detailangaben
Hauptverfasser:	SHIZUKUISHI MOMOKO, YAEGASHI HIDETAMI
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES THEREFOR APPARATUS FOR PROCESSING EXPOSED PHOTOGRAPHIC MATERIALS APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS SEMICONDUCTOR DEVICES
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Zusammenfassung:	PROBLEM TO BE SOLVED: To remove an antireflection film, formed under a resist film in photolithographic processes of a wafer, without influencing the resist film. SOLUTION: In the photolithographic processes of a wafer W, an antireflection film B having solubility to a developer is formed and then a resist film R is formed. A developer H1 is supplied to the wafer W, to develop the resist film R in the developing process, after exposure. When the development of the resist film R is finished, a developer H2, having a concentration lower than that of the developing liquid H1, is supplied to the wafer W. Only the antireflection film B is dissolved and removed, by supplying the developer H2. COPYRIGHT: (C)2005,JPO&NCIPI