SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing defective contact, and to provide the manufacturing method of the semiconductor. SOLUTION: In the forming area of a pad electrode 33 formed on an ILD (InterLayer Dielectric) 22 being an interlayer insulation film on an LOCOS (Local Oxidation of Silicon) oxide film 5, a stopper film 21 by CMP (Chemical Mechanical Polishing) treatment is formed. Thus, the area of the stopper film 21 can be taken sufficiently without reducing the area of a circuit forming area 34, and irregularity in the polishing quantity of the ILD 22 is suppressed. In addition, since the presence of the stopper film 21 secures the thickness of the ILD 22 to be a prescribed thickness, opening parts 24, 25 and 26 for contact are formed reliably. Thus, the defective contact is prevented. COPYRIGHT: (C)2005,JPO&NCIPI