METHOD OF CLEANING SEMICONDUCTOR DEVICE FABRICATION APPARATUS

PROBLEM TO BE SOLVED: To provide a method of cleaning a semiconductor device fabrication apparatus comprising removing a metal oxide layer generated when a conductive layer is formed on a semiconductor substrate formed with the metal oxide layer every time when the conductive layer is formed. SOLUTI...

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Bibliographische Detailangaben
Hauptverfasser:	LIM HYUN-SEOK, KOO YOON-BON, KAN SENSHU, CHOI SEUNGOL, HA IN-SU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of cleaning a semiconductor device fabrication apparatus comprising removing a metal oxide layer generated when a conductive layer is formed on a semiconductor substrate formed with the metal oxide layer every time when the conductive layer is formed. SOLUTION: The method for cleaning the semiconductor device fabrication apparatus includes the steps of; forming the conductive layer on the semiconductor substrate formed with the metal oxide layer using source gases containing conductive atoms within the semiconductor device fabrication apparatus; transferring the semiconductor substrate to the outside of the semiconductor device fabrication apparatus, and removing the one or more byproducts generated by the reaction of the source gases and the metal oxide layer in the absent state of the semiconductor substrate. The step of removing the byproducts is performed every time the step of forming the conductive layer is performed. As a result, the by-products generated when the conductive layer is formed on the semiconductor substrate formed with the metal oxide layer can be removed every time the conductive layer is formed. COPYRIGHT: (C)2005,JPO&NCIPI