TRANSISTOR AND CVD DEVICE FOR FORMING ITS GATE INSULATING FILM

PROBLEM TO BE SOLVED: To adjust properly an upper limit of fluorine concentration in a gate insulating film (3) by a fluorine element in a cleaning gas within a firm formation chamber, and to easily reduce the fluorine concentration when a transistor wherein a gate electrode is formed by a CVD device is used as a switching component for a pixel electrode of a liquid crystal device. SOLUTION: The surface of an electrode arranged in a film formation chamber is made non-porous, thereby preventing a fluorine element in a cleaning gas from being left in the film formation chamber. Then, the fluorine concentration in the gate insulating film (3) is adjusted at 1×1020atoms/cm3or less, preferably at 1×1019atoms/cm3or less. COPYRIGHT: (C)2005,JPO&NCIPI