CHARGING VESSEL FOR LIQUID CVD MATERIAL, CHARGING VESSEL OF LIQUID CVD MATERIAL AND METHOD OF VAPORIZING AND SUPPLYING USING THEM

PROBLEM TO BE SOLVED: To provide a means for supplying a liquid CVD material to a semiconductor manufacturing apparatus by efficiently vaporizing the liquid CVD material having a relatively low boiling point at a desired concentration and flow rate without using the apparatus having a complicated co...

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Hauptverfasser:	TAKAMATSU YUKICHI, ASANO AKIYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a means for supplying a liquid CVD material to a semiconductor manufacturing apparatus by efficiently vaporizing the liquid CVD material having a relatively low boiling point at a desired concentration and flow rate without using the apparatus having a complicated constitution. SOLUTION: The charging vessel for the liquid CVD material includes a vaporizing gas exhaust port of the liquid CVD material to fill a solid filler. Further, the charging vessel of the liquid CVD material includes the liquid CVD material in the charging vessel. Furthermore, the liquid CVD material filled in the charge vessel is vaporized by a temperature control, and supplied to the semiconductor manufacturing apparatus. COPYRIGHT: (C)2005,JPO&NCIPI