CAPACITOR AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide a capacitor which is equipped with a dielectric film having a hafnium oxide and an aluminum oxide, can obtain a characteristic of a high dielectric breakdown voltage in a high voltage applied area, and can prevent a leakage current from increasing caused by the follo...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KIL DEOK-SIN SOHN HYUNUL RO SAISEI |
| description | PROBLEM TO BE SOLVED: To provide a capacitor which is equipped with a dielectric film having a hafnium oxide and an aluminum oxide, can obtain a characteristic of a high dielectric breakdown voltage in a high voltage applied area, and can prevent a leakage current from increasing caused by the following heat treatment process after forming an upper electrode, and to provide its manufacturing method. SOLUTION: The capacitor is laminated with a lower electrode 21, a mixed dielectric film 22, and an upper electrode 23 in that order, and is equipped with the mixed dielectric film where the hafnium oxide 22B and the aluminum oxide 22A are mixed, in a portion where the mixed dielectric film 22 is adjacent to the upper electrode 23 or the lower electrode 21. COPYRIGHT: (C)2005,JPO&NCIPI |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2005159271A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2005159271A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2005159271A3</originalsourceid><addsrcrecordid>eNrjZFBzdgxwdPYM8Q9ScPRzUfAMCVbwdfQLdXN0DgkN8vRzV_B1DfHwd-FhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBqaGppZG5oaOxkQpAgAAXSPv</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CAPACITOR AND ITS MANUFACTURING METHOD</title><source>esp@cenet</source><creator>KIL DEOK-SIN ; SOHN HYUNUL ; RO SAISEI</creator><creatorcontrib>KIL DEOK-SIN ; SOHN HYUNUL ; RO SAISEI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a capacitor which is equipped with a dielectric film having a hafnium oxide and an aluminum oxide, can obtain a characteristic of a high dielectric breakdown voltage in a high voltage applied area, and can prevent a leakage current from increasing caused by the following heat treatment process after forming an upper electrode, and to provide its manufacturing method. SOLUTION: The capacitor is laminated with a lower electrode 21, a mixed dielectric film 22, and an upper electrode 23 in that order, and is equipped with the mixed dielectric film where the hafnium oxide 22B and the aluminum oxide 22A are mixed, in a portion where the mixed dielectric film 22 is adjacent to the upper electrode 23 or the lower electrode 21. COPYRIGHT: (C)2005,JPO&NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050616&DB=EPODOC&CC=JP&NR=2005159271A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050616&DB=EPODOC&CC=JP&NR=2005159271A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIL DEOK-SIN</creatorcontrib><creatorcontrib>SOHN HYUNUL</creatorcontrib><creatorcontrib>RO SAISEI</creatorcontrib><title>CAPACITOR AND ITS MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a capacitor which is equipped with a dielectric film having a hafnium oxide and an aluminum oxide, can obtain a characteristic of a high dielectric breakdown voltage in a high voltage applied area, and can prevent a leakage current from increasing caused by the following heat treatment process after forming an upper electrode, and to provide its manufacturing method. SOLUTION: The capacitor is laminated with a lower electrode 21, a mixed dielectric film 22, and an upper electrode 23 in that order, and is equipped with the mixed dielectric film where the hafnium oxide 22B and the aluminum oxide 22A are mixed, in a portion where the mixed dielectric film 22 is adjacent to the upper electrode 23 or the lower electrode 21. COPYRIGHT: (C)2005,JPO&NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBzdgxwdPYM8Q9ScPRzUfAMCVbwdfQLdXN0DgkN8vRzV_B1DfHwd-FhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBqaGppZG5oaOxkQpAgAAXSPv</recordid><startdate>20050616</startdate><enddate>20050616</enddate><creator>KIL DEOK-SIN</creator><creator>SOHN HYUNUL</creator><creator>RO SAISEI</creator><scope>EVB</scope></search><sort><creationdate>20050616</creationdate><title>CAPACITOR AND ITS MANUFACTURING METHOD</title><author>KIL DEOK-SIN ; SOHN HYUNUL ; RO SAISEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2005159271A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KIL DEOK-SIN</creatorcontrib><creatorcontrib>SOHN HYUNUL</creatorcontrib><creatorcontrib>RO SAISEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIL DEOK-SIN</au><au>SOHN HYUNUL</au><au>RO SAISEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CAPACITOR AND ITS MANUFACTURING METHOD</title><date>2005-06-16</date><risdate>2005</risdate><abstract>PROBLEM TO BE SOLVED: To provide a capacitor which is equipped with a dielectric film having a hafnium oxide and an aluminum oxide, can obtain a characteristic of a high dielectric breakdown voltage in a high voltage applied area, and can prevent a leakage current from increasing caused by the following heat treatment process after forming an upper electrode, and to provide its manufacturing method. SOLUTION: The capacitor is laminated with a lower electrode 21, a mixed dielectric film 22, and an upper electrode 23 in that order, and is equipped with the mixed dielectric film where the hafnium oxide 22B and the aluminum oxide 22A are mixed, in a portion where the mixed dielectric film 22 is adjacent to the upper electrode 23 or the lower electrode 21. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2005159271A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CAPACITOR AND ITS MANUFACTURING METHOD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T18%3A58%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIL%20DEOK-SIN&rft.date=2005-06-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2005159271A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |