DUMMY WAFER FOR CHEMOMECHANICAL POLISHING, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce the number of man-hour of re-film formation treatment based on operation of a dummy wafer in chemomechanical polishing. SOLUTION: The number of man-hour of re-film formation treatment of a polishing surface of a dummy wafer 10 can be reduced by using the dummy wafer 10 wherein a polishing surface in dummy polishing is formed of silicon carbide. That is, since polishing wear is extremely little when compared to a method wherein a silicon oxide film is taken as a polishing surface, both a silicon oxide film removal process required for reproduction of a silicon oxide film and a film formation process can be eliminated in a dummy process of chemomechanical polishing. As for the constitution of the dummy wafer 10, not only an entire thereof can be formed of silicon carbide but also a silicon carbide film can be formed on a wafer of another raw material as a polishing surface. COPYRIGHT: (C)2005,JPO&NCIPI