METHOD FOR VERIFYING RESULT OF MASK PATTERN CORRECTION, AND APPARATUS FOR VERIFYING RESULT OF MASK PATTERN CORRECTION

PROBLEM TO BE SOLVED: To provide a method for verifying mask pattern correction and an apparatus for verifying the result of pattern correction, by which the processing efficiency for verifying the result of mask pattern correction can be improved. SOLUTION: The apparatus is equipped with a verifyin...

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1. Verfasser: INAZU TAKATOSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for verifying mask pattern correction and an apparatus for verifying the result of pattern correction, by which the processing efficiency for verifying the result of mask pattern correction can be improved. SOLUTION: The apparatus is equipped with a verifying section for the result of mask pattern correction which includes a region-cutting means 107, an exposure simulation means 108, a resist model making means 109, an OPC (optical proximity correction) processing means 110, an ORC processing means 111, a means 112 for creating ED (exposure-defocus) trees and margin curves, and a means 113 to measure resist pattern dimensions; a data base section, having a storing means 115 for a layout pattern for verifying the result of mask pattern correction, a storage means 116 for parameters to be used for verifying the result of mask pattern correction, a storage means 118 for the execution result of verifying the result of mask pattern correction, and a storage means 117 for a resist model to store a resist model; and a graphic user interface section 103, having a layout editor 104, a parameter input part 105 and a result display part 106. COPYRIGHT: (C)2005,JPO&NCIPI