METHOD AND APPARATUS FOR FORMING VAPOR-DEPOSITED FILM

PROBLEM TO BE SOLVED: To provide a method for forming a uniformly vapor-deposited film on a substrate of a display device with the use of a non-contacting type high-frequency induction heating device, and to provide an apparatus for forming a vapor-deposited film suitable for the method. SOLUTION: T...

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Bibliographische Detailangaben
Hauptverfasser:	KYO MEISHU, SO KANSHO, TEI SHAKUKEN, KIM DOKON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a uniformly vapor-deposited film on a substrate of a display device with the use of a non-contacting type high-frequency induction heating device, and to provide an apparatus for forming a vapor-deposited film suitable for the method. SOLUTION: The method for forming the vapor-deposited film comprises producing a vapor of a depositing substance by heating the depositing substance with the use of the induction heating device, and contacting the vapor with the surface of a substrate to condense it. At this time, a substrate is vertically placed in a vapor-depositing space, and the vapor of the depositing substance for forming the vapor-deposited film is supplied to the substrate. Accordingly, the method forms a uniformly vapor-deposited film even on an upsized substrate, without bending the substrate during forming the film. The facility is downsized because a distance between a vaporizing source and the substrate can be shortened, and reduces the cost of itself. COPYRIGHT: (C)2005,JPO&NCIPI