COMPLETE DEPLETION TYPE SOI MOSFET

PROBLEM TO BE SOLVED: To provide a complete depletion type SOI MOSFET capable of suppressing short channel effect caused by permitting a drain electric field to pass through a BOX layer when the thickness of an SOI layer or the BOX layer is made to be an identical thickness to that of a conventional complete depletion type SOI MOSFET, and of suppressing kink effect. SOLUTION: The complete depletion type SOI MOSFET 11 or 12 is configured such that a p+ region 13A or a p+ region 13B and a p+ region 13C are formed into an L shape from between at least any one of an n+ source region 3 and an n+ drain region 4 and an embedded oxide film layer 2 to an adjacent region of at least any one of the n+ source region 3 and the n+ drain region 4 on the opposite side of the side of a p-channel region 5. COPYRIGHT: (C)2005,JPO&NCIPI