HIGH-RESISTANCE SILICON WAFER
PROBLEM TO BE SOLVED: To provide a relatively inexpensive, high-resistance silicon wafer which is free of COP (Crystal Originated Particle) and has high mechanical strength using a low-oxygen concentration silicon wafer which effectively inhibits generation of oxygen donors during heat-treatment per...
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| creator | SADAMITSU SHINSUKE HORAI MASATAKA |
| description | PROBLEM TO BE SOLVED: To provide a relatively inexpensive, high-resistance silicon wafer which is free of COP (Crystal Originated Particle) and has high mechanical strength using a low-oxygen concentration silicon wafer which effectively inhibits generation of oxygen donors during heat-treatment performed by a device manufacturer for circuit formation. SOLUTION: The high-resistance silicon wafer has a resistivity of ≥100 Ωcm, an interstitial oxygen concentration of ≤8×1017atoms/cm3(measured according to ASTM F121-1979) and an oxygen deposit (BMD: Bulk Micro Defect) density of ≤5×107pieces/cm3. COPYRIGHT: (C)2005,JPO&NCIPI |
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SOLUTION: The high-resistance silicon wafer has a resistivity of ≥100 Ωcm, an interstitial oxygen concentration of ≤8×1017atoms/cm3(measured according to ASTM F121-1979) and an oxygen deposit (BMD: Bulk Micro Defect) density of ≤5×107pieces/cm3. 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SOLUTION: The high-resistance silicon wafer has a resistivity of ≥100 Ωcm, an interstitial oxygen concentration of ≤8×1017atoms/cm3(measured according to ASTM F121-1979) and an oxygen deposit (BMD: Bulk Micro Defect) density of ≤5×107pieces/cm3. 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SOLUTION: The high-resistance silicon wafer has a resistivity of ≥100 Ωcm, an interstitial oxygen concentration of ≤8×1017atoms/cm3(measured according to ASTM F121-1979) and an oxygen deposit (BMD: Bulk Micro Defect) density of ≤5×107pieces/cm3. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | HIGH-RESISTANCE SILICON WAFER |
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