HIGH-RESISTANCE SILICON WAFER

PROBLEM TO BE SOLVED: To provide a relatively inexpensive, high-resistance silicon wafer which is free of COP (Crystal Originated Particle) and has high mechanical strength using a low-oxygen concentration silicon wafer which effectively inhibits generation of oxygen donors during heat-treatment per...

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Hauptverfasser:	SADAMITSU SHINSUKE, HORAI MASATAKA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a relatively inexpensive, high-resistance silicon wafer which is free of COP (Crystal Originated Particle) and has high mechanical strength using a low-oxygen concentration silicon wafer which effectively inhibits generation of oxygen donors during heat-treatment performed by a device manufacturer for circuit formation. SOLUTION: The high-resistance silicon wafer has a resistivity of ≥100 Ωcm, an interstitial oxygen concentration of ≤8×1017atoms/cm3(measured according to ASTM F121-1979) and an oxygen deposit (BMD: Bulk Micro Defect) density of ≤5×107pieces/cm3. COPYRIGHT: (C)2005,JPO&NCIPI