NONVOLATILE STORAGE APPARATUS

PROBLEM TO BE SOLVED: To make a position to which an electron is injected into at the time of writing and a position to which a positive hole is injected at the time of deleting coincided with each other in a MONOS type nonvolatile storage apparatus. SOLUTION: First and second control gates 304 and 305 are formed above a substrate 301 via a second gate insulating layer 306 comprising an ONO film. The second gate insulating layer has a structure in which a portion of a third layer comprising a silicon oxide layer is removed. This makes it possible to make a position to which an electron is injected into at the time of writing and a position to which a positive hole is injected at the time of deleting coincided with each other in the vicinity of the step of the third layer. COPYRIGHT: (C)2005,JPO&NCIPI