ITO MULTILAYER FILM AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a good-quality ITO multilayer film endowed with low resistance and low membrane stress and to provide its manufacturing method. SOLUTION: The manufacturing method of the ITO multilayer film comprises a process of forming a first ITO film on an upper part of a plastic...

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Bibliographische Detailangaben
Hauptverfasser:	ITAMI SATORU, MIYOSHI AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a good-quality ITO multilayer film endowed with low resistance and low membrane stress and to provide its manufacturing method. SOLUTION: The manufacturing method of the ITO multilayer film comprises a process of forming a first ITO film on an upper part of a plastic body at a base plate temperature of 20 to 120°C with the use of an ion plating method, and a process of forming a second ITO film on the first ITO film at a base plate temperature of 150 to 250°C with the use of the ion plating method. Since the first ITO film has the low membrane stress and the second ITO film has the low resistance, a good-quality ITO multilayer film endowed with the low resistance and the low membrane stress as a whole is formed. COPYRIGHT: (C)2005,JPO&NCIPI