SINGLEMODE VERTICAL RESONATOR SURFACE LUMINESCENCE LASER AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide an improved single-mode resonator surface luminescence laser which supplies larger current filling aperture and higher singlemode output light power, and its manufacturing method. SOLUTION: The vertical resonator surface luminescence laser (VCSEL) 10, which generates...

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Hauptverfasser: GIOVANE LAURA, CHANG AN-NIEN, KOELLE BERNHARD ULRICH, CORZINE SCOTT W
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creator GIOVANE LAURA
CHANG AN-NIEN
KOELLE BERNHARD ULRICH
CORZINE SCOTT W
description PROBLEM TO BE SOLVED: To provide an improved single-mode resonator surface luminescence laser which supplies larger current filling aperture and higher singlemode output light power, and its manufacturing method. SOLUTION: The vertical resonator surface luminescence laser (VCSEL) 10, which generates single-mode laser light, comprises a luminescence surface 30 and a monolithic longitudinal stack structure body. The stack structure body has a first and a second mirrors 14, 16 which have light reflectances R1, R2with respect to operating wavelength light respectively, further one side of R1and R2is greater than 99.9%, and another side is made smaller than 99.7%. In a space between the first and the second mirrors 14, 16, a cavity region 12, which has an active light generation region 19 and a cavity extension region 26, is formed. The stack structure body further has a current confining region 28 in which ion is implanted, and peak implantation concentration portion is estranged by a distance longer than 0.5μm in longitudinal direction from the cavity region 12. COPYRIGHT: (C)2005,JPO&NCIPI
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2005129960A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2005129960A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2005129960A3</originalsourceid><addsrcrecordid>eNqNjMsKwjAQAHPxIOo_LN6FWFHocUm2NpKHZJNeS5F4Ei3U_8cKfoCnYWCYpchs_NmSC5qgo5iMQguROHhMIQLn2KAisNkZT6zIfwWZIqDXYBKDQ5_nJuU4n8BRaoNei8V9eExl8-NKbBtKqt2V8dWXaRxu5Vne_eVaSXncV3V9knj4K_oA6cYxJQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SINGLEMODE VERTICAL RESONATOR SURFACE LUMINESCENCE LASER AND ITS MANUFACTURING METHOD</title><source>esp@cenet</source><creator>GIOVANE LAURA ; CHANG AN-NIEN ; KOELLE BERNHARD ULRICH ; CORZINE SCOTT W</creator><creatorcontrib>GIOVANE LAURA ; CHANG AN-NIEN ; KOELLE BERNHARD ULRICH ; CORZINE SCOTT W</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide an improved single-mode resonator surface luminescence laser which supplies larger current filling aperture and higher singlemode output light power, and its manufacturing method. SOLUTION: The vertical resonator surface luminescence laser (VCSEL) 10, which generates single-mode laser light, comprises a luminescence surface 30 and a monolithic longitudinal stack structure body. The stack structure body has a first and a second mirrors 14, 16 which have light reflectances R1, R2with respect to operating wavelength light respectively, further one side of R1and R2is greater than 99.9%, and another side is made smaller than 99.7%. In a space between the first and the second mirrors 14, 16, a cavity region 12, which has an active light generation region 19 and a cavity extension region 26, is formed. The stack structure body further has a current confining region 28 in which ion is implanted, and peak implantation concentration portion is estranged by a distance longer than 0.5μm in longitudinal direction from the cavity region 12. COPYRIGHT: (C)2005,JPO&amp;NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20050519&amp;DB=EPODOC&amp;CC=JP&amp;NR=2005129960A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20050519&amp;DB=EPODOC&amp;CC=JP&amp;NR=2005129960A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GIOVANE LAURA</creatorcontrib><creatorcontrib>CHANG AN-NIEN</creatorcontrib><creatorcontrib>KOELLE BERNHARD ULRICH</creatorcontrib><creatorcontrib>CORZINE SCOTT W</creatorcontrib><title>SINGLEMODE VERTICAL RESONATOR SURFACE LUMINESCENCE LASER AND ITS MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide an improved single-mode resonator surface luminescence laser which supplies larger current filling aperture and higher singlemode output light power, and its manufacturing method. SOLUTION: The vertical resonator surface luminescence laser (VCSEL) 10, which generates single-mode laser light, comprises a luminescence surface 30 and a monolithic longitudinal stack structure body. The stack structure body has a first and a second mirrors 14, 16 which have light reflectances R1, R2with respect to operating wavelength light respectively, further one side of R1and R2is greater than 99.9%, and another side is made smaller than 99.7%. In a space between the first and the second mirrors 14, 16, a cavity region 12, which has an active light generation region 19 and a cavity extension region 26, is formed. The stack structure body further has a current confining region 28 in which ion is implanted, and peak implantation concentration portion is estranged by a distance longer than 0.5μm in longitudinal direction from the cavity region 12. COPYRIGHT: (C)2005,JPO&amp;NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjMsKwjAQAHPxIOo_LN6FWFHocUm2NpKHZJNeS5F4Ei3U_8cKfoCnYWCYpchs_NmSC5qgo5iMQguROHhMIQLn2KAisNkZT6zIfwWZIqDXYBKDQ5_nJuU4n8BRaoNei8V9eExl8-NKbBtKqt2V8dWXaRxu5Vne_eVaSXncV3V9knj4K_oA6cYxJQ</recordid><startdate>20050519</startdate><enddate>20050519</enddate><creator>GIOVANE LAURA</creator><creator>CHANG AN-NIEN</creator><creator>KOELLE BERNHARD ULRICH</creator><creator>CORZINE SCOTT W</creator><scope>EVB</scope></search><sort><creationdate>20050519</creationdate><title>SINGLEMODE VERTICAL RESONATOR SURFACE LUMINESCENCE LASER AND ITS MANUFACTURING METHOD</title><author>GIOVANE LAURA ; CHANG AN-NIEN ; KOELLE BERNHARD ULRICH ; CORZINE SCOTT W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2005129960A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>GIOVANE LAURA</creatorcontrib><creatorcontrib>CHANG AN-NIEN</creatorcontrib><creatorcontrib>KOELLE BERNHARD ULRICH</creatorcontrib><creatorcontrib>CORZINE SCOTT W</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GIOVANE LAURA</au><au>CHANG AN-NIEN</au><au>KOELLE BERNHARD ULRICH</au><au>CORZINE SCOTT W</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SINGLEMODE VERTICAL RESONATOR SURFACE LUMINESCENCE LASER AND ITS MANUFACTURING METHOD</title><date>2005-05-19</date><risdate>2005</risdate><abstract>PROBLEM TO BE SOLVED: To provide an improved single-mode resonator surface luminescence laser which supplies larger current filling aperture and higher singlemode output light power, and its manufacturing method. SOLUTION: The vertical resonator surface luminescence laser (VCSEL) 10, which generates single-mode laser light, comprises a luminescence surface 30 and a monolithic longitudinal stack structure body. The stack structure body has a first and a second mirrors 14, 16 which have light reflectances R1, R2with respect to operating wavelength light respectively, further one side of R1and R2is greater than 99.9%, and another side is made smaller than 99.7%. In a space between the first and the second mirrors 14, 16, a cavity region 12, which has an active light generation region 19 and a cavity extension region 26, is formed. The stack structure body further has a current confining region 28 in which ion is implanted, and peak implantation concentration portion is estranged by a distance longer than 0.5μm in longitudinal direction from the cavity region 12. COPYRIGHT: (C)2005,JPO&amp;NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title SINGLEMODE VERTICAL RESONATOR SURFACE LUMINESCENCE LASER AND ITS MANUFACTURING METHOD
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