METHOD OF ETCHING SIDEWALL OF GROUP III-V BASED COMPOUND FOR ELECTRO-OPTICAL ELEMENT

PROBLEM TO BE SOLVED: To provide an improved method for conducting high aspect ratio etching by the use of plasma. SOLUTION: The etching method is adapted for etching a group III-V based compound and comprises steps of forming a mask on the group III-V based compound, placing the group III-V based c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHOW KAI CHEUNG, MIRKARIMI LAURA W
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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