METHOD OF ETCHING SIDEWALL OF GROUP III-V BASED COMPOUND FOR ELECTRO-OPTICAL ELEMENT

PROBLEM TO BE SOLVED: To provide an improved method for conducting high aspect ratio etching by the use of plasma. SOLUTION: The etching method is adapted for etching a group III-V based compound and comprises steps of forming a mask on the group III-V based compound, placing the group III-V based c...

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Bibliographische Detailangaben
Hauptverfasser:	CHOW KAI CHEUNG, MIRKARIMI LAURA W
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an improved method for conducting high aspect ratio etching by the use of plasma. SOLUTION: The etching method is adapted for etching a group III-V based compound and comprises steps of forming a mask on the group III-V based compound, placing the group III-V based compound and the mask into a reactor applied with pressure between about 2 mTorr to about 20 mTorr, introducing a first gas selected from the group of HBr, HI, and IBr into the reactor, introducing a second gas of BCl3into the reactor, and exposing the group III-V based compound to gas plasma containing the first and second gases and etching smooth sidewalls having high aspect ratios. COPYRIGHT: (C)2005,JPO&NCIPI