FERROMAGNETIC TUNNEL-JUNCTION FILM FORMING DEVICE

PROBLEM TO BE SOLVED: To provide a TMR film having stable junction characteristics even when the oxidizing force of an oxidizing chamber changes with time. SOLUTION: A TMR-film forming device in which an apparatus capable of measuring the thickness of a substrate-surface oxide film has the oxidizing...

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Bibliographische Detailangaben
Hauptverfasser:	MITSUZUKA TSUTOMU, OSHIMA NORIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a TMR film having stable junction characteristics even when the oxidizing force of an oxidizing chamber changes with time. SOLUTION: A TMR-film forming device in which an apparatus capable of measuring the thickness of a substrate-surface oxide film has the oxidizing chamber is used. A substrate forming the device differs from one measuring the thickness of the surface oxide film in this case. When the device is used, a tunnel barrier is oxidized under the optimum oxidizing condition while using the thickness of the oxidizing silicon film formed on the surface of a silicon substrate as a monitor. COPYRIGHT: (C)2005,JPO&NCIPI