HIGH FREQUENCY POWER AMPLIFIER CIRCUIT AND ELECTRONIC COMPONENT FOR HIGH FREQUENCY POWER AMPLIFICATION

PROBLEM TO BE SOLVED: To suppress variation in high frequency power amplification characteristics by automatically correcting shift of a bias point due to short channel effect of an FET or early effect of a bipolar transistor in a high frequency power amplifier circuit imparting a bias to an FET for...

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Hauptverfasser: TSURUMAKI HIROKAZU, FURUYA TOMIO, ISHIKAWA MAKOTO, NAGAI HIROYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To suppress variation in high frequency power amplification characteristics by automatically correcting shift of a bias point due to short channel effect of an FET or early effect of a bipolar transistor in a high frequency power amplifier circuit imparting a bias to an FET for amplification by current mirror system. SOLUTION: The high frequency power amplifier circuit imparting a bias to an FET for amplification by current mirror system comprises a current simulation transistor (Q7) having a channel length or a base width identical to that of a transistor (Q0) for amplification and being fabricated by the identical process, and a bias generating circuit for comparing a voltage formed based on a current flowing through the transistor with a reference voltage generated by a current/voltage converting element (Q1) for converting the current from a constant current circuit into a voltage and imparting the transistor for amplification and the current simulation transistor with such a bias as suppressing variation in the idle current of the transistor for amplification due to short channel effect or early effect. COPYRIGHT: (C)2005,JPO&NCIPI