MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

PROBLEM TO BE SOLVED: To improve the operation margin of a magnetic memory device. SOLUTION: A magnetic random access memory (MRAM) (100) includes an array of magnetic memory cells (102) arranged on intersection grids (104, 106, 108). The pseudo voltage stored in a floating wiring capacitor of a non...

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Bibliographische Detailangaben
Hauptverfasser: EATON JAMES R JR, ELDREDGE KENNETH J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve the operation margin of a magnetic memory device. SOLUTION: A magnetic random access memory (MRAM) (100) includes an array of magnetic memory cells (102) arranged on intersection grids (104, 106, 108). The pseudo voltage stored in a floating wiring capacitor of a non-selected bit selection line (108) and word selection lines (104, 106) is limited by a diode (110) and is discharged. The control of the pseudo voltage improves the operation margin of the device (100) and enables construction of a larger array. COPYRIGHT: (C)2005,JPO&NCIPI