SEMICONDUCTOR INTEGRATED DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor integrated device which can reduce an influence of radio interference. SOLUTION: A semiconductor element is formed on a semiconductor substrate 10, and the device comprises an insulating film 12 formed on the surface of the semiconductor substrate 10...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ONISHI NORIHISA, IBE TETSUYA, SHIINE TAKETOSHI, KUSHITANI NAOYUKI, FUJITA HIROSHI
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor integrated device which can reduce an influence of radio interference. SOLUTION: A semiconductor element is formed on a semiconductor substrate 10, and the device comprises an insulating film 12 formed on the surface of the semiconductor substrate 10 and a conductive power supply wiring 14 and a ground wiring 16 provided on the surface of the insulating film 12 for supplying power to the semiconductor element from an outside. In the semiconductor integrated device, at least one of the power supply wiring 14 and the ground wiring 16 is divided into two or more and at least a part of the power supply wiring 14 and the ground wiring 16 is arranged alternately. COPYRIGHT: (C)2005,JPO&NCIPI