METHOD OF FORMING RESIST PATTERN

PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of always forming a stable resist pattern, when a liquid immersion exposure device is used. SOLUTION: This resist pattern forming method comprises the steps of forming a resist film (R) on a semiconductor substrate (S) having a...

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1. Verfasser: SHIOBARA HIDESHI
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description PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of always forming a stable resist pattern, when a liquid immersion exposure device is used. SOLUTION: This resist pattern forming method comprises the steps of forming a resist film (R) on a semiconductor substrate (S) having a work film thereon, exposing the resist film with the liquid immersion exposure device which carries out exposure in a state, where the space between the resist film and an objective lens (1) is filled with a liquid (2), and developing the resist film. The method further comprises the step of forming a resist-protecting film (R1) which is insoluble in the liquid, on the resist film after the formation of the resist film and before the exposure of the resist film. COPYRIGHT: (C)2005,JPO&NCIPI
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
title METHOD OF FORMING RESIST PATTERN
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