METHOD OF FORMING RESIST PATTERN

PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of always forming a stable resist pattern, when a liquid immersion exposure device is used. SOLUTION: This resist pattern forming method comprises the steps of forming a resist film (R) on a semiconductor substrate (S) having a...

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Bibliographische Detailangaben
1. Verfasser:	SHIOBARA HIDESHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of always forming a stable resist pattern, when a liquid immersion exposure device is used. SOLUTION: This resist pattern forming method comprises the steps of forming a resist film (R) on a semiconductor substrate (S) having a work film thereon, exposing the resist film with the liquid immersion exposure device which carries out exposure in a state, where the space between the resist film and an objective lens (1) is filled with a liquid (2), and developing the resist film. The method further comprises the step of forming a resist-protecting film (R1) which is insoluble in the liquid, on the resist film after the formation of the resist film and before the exposure of the resist film. COPYRIGHT: (C)2005,JPO&NCIPI