STENCIL MASK AND ITS MANUFACTURING METHOD, ALIGNER AND EXPOSURE METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

PROBLEM TO BE SOLVED: To provide a stencil mask capable of effectively reducing a dimension of apertures to be a mask pattern while preventing damages on a pattern formation layer and variations of the position accuracy of apertures and provide a manufacturing method of the stencil mask, and provide...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	NOHAMA SHIYOUJI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY CONVERSION OF CHEMICAL ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY ELECTROTHERAPY HOLOGRAPHY HUMAN NECESSITIES HYGIENE MAGNETOTHERAPY MATERIALS THEREFOR MEDICAL OR VETERINARY SCIENCE NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS RADIATION THERAPY RADIOACTIVE SOURCES SEMICONDUCTOR DEVICES ULTRASOUND THERAPY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a stencil mask capable of effectively reducing a dimension of apertures to be a mask pattern while preventing damages on a pattern formation layer and variations of the position accuracy of apertures and provide a manufacturing method of the stencil mask, and provide an aligner and an exposure method capable of performing the exposure of a fine pattern on a layer to be exposed by using the stencil mask, and a method for manufacturing an electronic device. SOLUTION: A dimension control layer 15 is formed on all surface of the pattern formation layer 12 including the apertures 12a for transfer of a charged particle beam by an isotropic film forming method, so that the dimension L2 of the apertures 13 to be the mask pattern substantially is reduced by the amount of the film thickness of the dimension control layer 15 from the dimension L1 of the apertures 12a formed by using a mask drawing machine. It is preferable that the dimension control layer 15 has conductivity for preventing charge up and is made of a material having an approximately same linear expansion coefficient with that of the pattern formation layer 12. COPYRIGHT: (C)2005,JPO&NCIPI