EXTREME ULTRA VIOLET SOURCE
PROBLEM TO BE SOLVED: To provide a new extreme ultra violet (EUV) radiation source and a photolithography apparatus which increase intensity of EUV radiation. SOLUTION: An EUV radiation source according to the present invention comprises an irradiation chamber 1 including irradiation zone 3. In the...
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| creator | BARTHOD BENOIT MORPAIN MATTHIEU RIVAL JEAN-LUC |
| description | PROBLEM TO BE SOLVED: To provide a new extreme ultra violet (EUV) radiation source and a photolithography apparatus which increase intensity of EUV radiation. SOLUTION: An EUV radiation source according to the present invention comprises an irradiation chamber 1 including irradiation zone 3. In the irradiation zone 3, a flow of radiation product, such as a flow of xenon propagating along the direction II-II extending to cross an optical axis I-I, is formed. The irradiation zone 3 is arranged at optical axis I-I to be close to barrier wall 4 for connecting an irradiation chamber 1 to a transfer chamber 2. Power laser beams 5 and 6 hit the flow of radiation product in the irradiation zone 3 to produce EUV radiation. The EUV radiation propagates through barrier rib 4 and is adjusted by ellipse mirror 13 in transfer chamber 2. An operation pump 11 maintains pressure P2 in a transfer chamber 2 fully lower than pressure P1 in the irradiation chamber 1. COPYRIGHT: (C)2005,JPO&NCIPI |
| format | Patent |
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SOLUTION: An EUV radiation source according to the present invention comprises an irradiation chamber 1 including irradiation zone 3. In the irradiation zone 3, a flow of radiation product, such as a flow of xenon propagating along the direction II-II extending to cross an optical axis I-I, is formed. The irradiation zone 3 is arranged at optical axis I-I to be close to barrier wall 4 for connecting an irradiation chamber 1 to a transfer chamber 2. Power laser beams 5 and 6 hit the flow of radiation product in the irradiation zone 3 to produce EUV radiation. The EUV radiation propagates through barrier rib 4 and is adjusted by ellipse mirror 13 in transfer chamber 2. An operation pump 11 maintains pressure P2 in a transfer chamber 2 fully lower than pressure P1 in the irradiation chamber 1. 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SOLUTION: An EUV radiation source according to the present invention comprises an irradiation chamber 1 including irradiation zone 3. In the irradiation zone 3, a flow of radiation product, such as a flow of xenon propagating along the direction II-II extending to cross an optical axis I-I, is formed. The irradiation zone 3 is arranged at optical axis I-I to be close to barrier wall 4 for connecting an irradiation chamber 1 to a transfer chamber 2. Power laser beams 5 and 6 hit the flow of radiation product in the irradiation zone 3 to produce EUV radiation. The EUV radiation propagates through barrier rib 4 and is adjusted by ellipse mirror 13 in transfer chamber 2. An operation pump 11 maintains pressure P2 in a transfer chamber 2 fully lower than pressure P1 in the irradiation chamber 1. 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SOLUTION: An EUV radiation source according to the present invention comprises an irradiation chamber 1 including irradiation zone 3. In the irradiation zone 3, a flow of radiation product, such as a flow of xenon propagating along the direction II-II extending to cross an optical axis I-I, is formed. The irradiation zone 3 is arranged at optical axis I-I to be close to barrier wall 4 for connecting an irradiation chamber 1 to a transfer chamber 2. Power laser beams 5 and 6 hit the flow of radiation product in the irradiation zone 3 to produce EUV radiation. The EUV radiation propagates through barrier rib 4 and is adjusted by ellipse mirror 13 in transfer chamber 2. An operation pump 11 maintains pressure P2 in a transfer chamber 2 fully lower than pressure P1 in the irradiation chamber 1. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR X-RAY TECHNIQUE |
| title | EXTREME ULTRA VIOLET SOURCE |
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