METHOD AND DEVICE FOR PRESERVING WORD LINE PASS BIAS USING ROM IN NAND TYPE FLASH MEMORY

PROBLEM TO BE SOLVED: To provide a method and a device for preserving word line pass bias using a ROM block in NAND type flash memory. SOLUTION: The method for preserving the word line pass bias include a step for closing a pre-charge transistor of a pre-charge circuit before the operation of a pass...

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1. Verfasser: KIN GISHAKU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method and a device for preserving word line pass bias using a ROM block in NAND type flash memory. SOLUTION: The method for preserving the word line pass bias include a step for closing a pre-charge transistor of a pre-charge circuit before the operation of a pass transistor for pre-charging a selected word line by separately outputting to the ROM block a program pre-charge control signal transmitted to a group access signal generation circuit for outputting a group access signal and a program pre-charge control signal transmitted to block word line and synchronizing the signals in a synchronization circuit. Accordingly, such a problem is dissolved that pass bias of the selected word line is discharged by time mismatching between a group access control circuit and a X decoder due to loading. COPYRIGHT: (C)2005,JPO&NCIPI